elektronische bauelemente SSG4502C n-ch: 10 a, 30 v, r ds(on) 16 m ?? p-ch: -8.5 a, -30 v, r ds(on) 23 m ?? n & p-ch enhancement mode power mosfet 27-dec-2010 rev. b page 1 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a h b m d c j k f l e n g rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density tr ench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers,. printers, pcmcia cards, cellular and cordless telephones features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sop-8 saves board space ? fast switching speed ? high performance trench technology package information package mpq leadersize sop-8 2.5k 13? inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol n- ch p- ch unit drain-source voltage v ds 30 -30 v gate-source voltage v gs 20 -20 v i d @ t a = 25c 10 -8.5 a continuous drain current 1 i d @ t a = 70c 8.1 -6.8 a pulsed drain current 2 i dm 50 50 a continuous source current (diode conduction) 1 i s 2.3 -2.1 a p d @ t a = 25c 2.1 2.1 w total power dissipation 1 p d @ t a = 70c 1.3 1.3 w operating junction & stor age temperature range t j , t stg -55 ~ 150 c thermal resistance ratings t Q 10 sec 62.5 c / w maximum junction-to-ambient 1 steady state r ja 110 c / w notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. millimete r millimete r ref. min. max. ref. min. max. a 5.8 6.20 h 0.35 0.51 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d0 8 l 1.35 1.75 e 0.50 0.93 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. sop-8 g g s s d d d d
elektronische bauelemente SSG4502C n-ch: 10 a, 30 v, r ds(on) 16 m ?? p-ch: -8.5 a, -30 v, r ds(on) 23 m ?? n & p-ch enhancement mode power mosfet 27-dec-2010 rev. b page 2 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol ch min. typ. max. unit teat conditions static n 30 - - v gs = 0v, i d = 250 a drain-source breakdown voltage v (br)dss p -30 - - v v gs = 0v, i d = -250 a n 1 - - v ds = v gs , i d = 250 a gate threshold voltage v gs(th) p -1 - - v v ds = v gs , i d = -250 a n - - 100 v ds = 0v, v gs = 20v gate-body leakage i gss p - - 100 na v ds = 0v, v gs = -20v n - - 1 v ds = 24v, v gs = 0v zero gate voltage drain current i dss p - - -1 a v ds = -24v, v gs = 0v n 20 - - v ds = 5v, v gs = 10v on-state drain current 1 i d(on) p -50 - - a v ds = -5v, v gs = -10v - - 16 v gs = 10v, i d = 10a n - - 20 v gs = 4.5v, i d = 8.4a - - 23 v gs = -10v, i d = -8.5a drain-source on-resistance 1 r ds(on) p - - 33 m ? v gs = -4.5v, i d = -6.8a n - 40 - v ds = 15v, i d = 10a forward transconductance 1 g fs p - 31 - s v ds = -15v, i d = -9.5a dynamic 2 n - 12 - total gate charge q g p - 13 - n - 3.3 - gate-source charge q gs p - 5.8 - n - 4.5 - gate-drain charge q gd p - 12 - nc n-channel i d = 10a, v ds = 15v, v gs = 4.5v p-channel i d = -10a, v ds = -15v, v gs = -4.5v n - 20 - turn-on delay time t d(on) p - 15 - n - 9 - rise time t r p - 16 - n - 70 - turn-off delay time t d(off) p - 62 - n - 20 - fall time t f p - 46 - ns n-channel v dd = 15v, v gs = 10v i d = 1a, r gen = 25 ? p-channel v dd = -15v, v gs = -10v i d = -1a, r gen = 15 ? notes: 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not s ubject to production testing.
elektronische bauelemente SSG4502C n-ch: 10 a, 30 v, r ds(on) 16 m ?? p-ch: -8.5 a, -30 v, r ds(on) 23 m ?? n & p-ch enhancement mode power mosfet 27-dec-2010 rev. b page 3 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves (n-channel)
elektronische bauelemente SSG4502C n-ch: 10 a, 30 v, r ds(on) 16 m ?? p-ch: -8.5 a, -30 v, r ds(on) 23 m ?? n & p-ch enhancement mode power mosfet 27-dec-2010 rev. b page 4 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente SSG4502C n-ch: 10 a, 30 v, r ds(on) 16 m ?? p-ch: -8.5 a, -30 v, r ds(on) 23 m ?? n & p-ch enhancement mode power mosfet 27-dec-2010 rev. b page 5 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves (p-channel)
elektronische bauelemente SSG4502C n-ch: 10 a, 30 v, r ds(on) 16 m ?? p-ch: -8.5 a, -30 v, r ds(on) 23 m ?? n & p-ch enhancement mode power mosfet 27-dec-2010 rev. b page 6 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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